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Detailed explanation of ASEMI wafer terminology!

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Interpretation of terminology

ASEMI takes you on the wafer world

Wafers are a cautious, meticulous object in the eyes of many people. It requires a lot of processes. It requires a lot of research, and it requires a very fine procedure. Therefore, the wafer has to undergo many processes in its lifetime, which has created a huge library of wafer terminology. ASEMI Semiconductor wants to work with you to study the wafer terminology.

Detailed explanation of ASEMI wafer terminology!

ASEMI meets your curiosity about "wafers" Because the terminology of wafers is too much, ASEMI Semiconductor simply introduces the meaning of some of them in order to streamline.

Registration accuracy - the accuracy of the transfer pattern in the lithography process; anisotropic - only a small amount or no lateral indentation during the etching process; contamination area - any foreign particles or substances on the surface of the wafer; Azimuth - measures the angle between the entrance face and the main crystal axis; back - the bottom surface of the wafer; bottom silicon layer - the wafer at the bottom of the insulation is the basis of the top silicon layer; bipolar transistor - can be used Hole and electron conduction charge transistor; bonded wafer - two wafers bonded together by a silicon dioxide layer as an insulating layer; bonding surface - two wafer bonded contact areas; buried layer - The low resistance path formed for the flow of the circuit current, the dopant is tantalum and arsenic; the buried oxide layer (BOX) - the insulating layer between the two wafers.

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Carrier - a hole or electron used to conduct current in a wafer; chemical-mechanical polishing - a process for smoothing and polishing a wafer, using both chemical and mechanical polishing; chuck traces - on the wafer Traces caused by robots, chucks or trays found on any surface; micropits - defects that are distinguishable on the surface of the wafer visible under diffused illumination; conductivity - a measure of the ease with which carriers pass through the material Measurement index; conductivity type - type of carrier in the wafer, N-type and P-type; contaminated particles - particles on the surface of the wafer; crystal defects - voids and layers contained in some crystals that affect circuit performance Wrong; depletion layer - the area of the electric field on the wafer that excludes carriers;

Grooves - scratches that have not been removed; manual imprinting - markings made manually on the back side to distinguish between different wafers; haze - a large number of defects on the wafer surface, often manifested as a matte surface Hole-like, similar to positive charge, caused by the absence of valence electrons; ingots - cylinders formed of polycrystals or single crystals, from which the wafer is cut; laser scattering - caused by wafer surface defects Pulse signal; lithography - the process from mask to wafer transfer; local light scattering - wafer surface features such as small pits or scratches that cause light scattering, also known as spot defects.

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