ASEMI Low VF Schottky diode technology

Hot item

The SBT20100VF and SBT20100UF 20A, 100V low forward Schottky products are hot products in 2016. At constant current, the forward voltage drop is nearly 30% lower than conventional Schottky. Using advanced groove manufacturing technology, it can increase the full load efficiency by more than 2% approximately. ASEMI brand low pressure drop Schottky SBT20100VF and SBT20100UF, both adopt the same three feet common structure.

The V of SBT20100VF stands for V version LOW VF (100V V version VF=0.63v), while SBT20100UF stands for

ULTRA LOW VF (100V U version VF = 0.58v). We can also see from the table that the difference between SBT20100VF and SBT20100UF is mainly due to the VF value.

3 generations upgrade

ASEMI brand of low-voltage drop Schottky diodes currently has three generations of LOW VF SKY after five years of development . This product is mainly focused on power conversion efficiency, and achieves ultra-low VF characteristics and fast switching characteristics, which can help your power products improve power switching efficiency and energy saving requirements. ASEMI has a new breakthrough for low-voltage drop Schottky diodes. Technical update.

Plane process decomposition

The second generation of ASEMI low-voltage drop Schottky uses a planar MOS process to incorporate the MOSFET fabrication process into the Schottky chip process, increasing the density of the chip cell structure, thereby overcoming the traditional Schottky parameters in VF and IR. The balance problem is to maintain the advantages of the traditional Schottky, and to solve the barrier that traditional Schottky encounters in the leakage design.